1 dual p-channel 40 v (d-s) mosfet feat ur es ? halogen-fr ee acc o rding to iec 61249-2-21 definition ?trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to ro hs directive 2002/95/ec applic ation s ? load sw itch es - notebook pcs - desktop pcs product summary v ds (v) r ds(on) ( ? ) i d (a) d q g (typ.) - 40 0.027 a t v gs = - 10 v - 8 21.7 nc 0 .034 a t v gs = - 4.5 v - 7.2 notes: a. su rface mounted o n 1" x 1" fr4 board. b. t = 10 s. c. maximum under steady stat e conditions is 110 c/w. d. based on t c = 25 c. e. limited by packag e. absolute maximum ratings (t a = 25 c , unless otherwise noted) param e ter symbol li mit un it d rain-source voltage v ds - 40 v gate-source voltage v gs 20 c ontinuous dr a in current (t j = 150 c) t c = 25 c i d - 8.0 a t c = 70 c - 6.5 t a = 25 c - 6.4 a, b t a = 70 c - 5.1 a, b pulsed drain current i dm - 30 e c ontin uou s source-dr ain diode current t c = 25 c i s - 2.6 t a = 25 c - 1.6 a, b avalanche current l = 0. 1 mh i as - 20 single-pulse avalanche energy e as 20 mj maxi m um power dissipation t c = 25 c p d 3.2 w t c = 70 c 2.1 t a = 25 c 2.0 a, b t a = 70 c 1.28 a, b operating j unction and stor age temperature range t j , t stg - 55 to 150 c the r mal resistance ratings p arameter symbol typic al ma ximum unit ma ximum junction-to-ambient a, c t ?? 10 s r th j a 47 62.5 c/w maximu m j unction-to-foot steady state r thjf 29 38 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top vi e w 2 3 4 1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet www.din-tek.jp dt m4 909
2 note s : a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b e yond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) param e ter sym bol t est con ditions min. typ. max. un it static drain-source breakdown v olta ge v ds v gs = 0 v, i d = - 250 a - 40 v v ds t emper ature coefficient ' v ds /t j i d = - 250 a - 34 mv /c v gs(th) temperature coefficient ' v gs(th) /t j 4.8 gate-so urce thresho l d voltage v gs(th) v ds = v gs , i d = - 250 a - 1 . 2 - 2.5 v gate-s ource leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate v o ltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 55 c - 10 on-state dr ain current a i d( o n ) v ds t - 10 v, v gs = - 10 v - 20 a drain-source on-state re sista nce a r ds(on) v gs = - 10 v, i d = - 8 a 0.021 0.027 : v gs = - 4.5 v, i d = - 5 a 0.027 0.034 f orw ard transconductance a g fs v ds = - 10 v, i d = - 8 a 22 s dynami c b input capacitan ce c iss v ds = - 20 v, v gs = 0 v, f = 1 mhz 2000 pf output c apacitance c oss 240 reverse t r ansfer capacitance c rss 202 total gate charge q g v ds = - 20 v, v gs = - 10 v, i d = - 10 a 41. 5 63 nc v ds = - 20 v, v gs = - 4.5 v, i d = - 10 a 21. 7 33 gate-source charge q gs 5.6 gate-dr a in charge q gd 9. 8 g a te re si sta n ce r g f = 1 mhz 1.5 6 12 : tu r n - o n d e l ay t i m e t d(on) v dd = - 20 v, r l = 2 : i d # - 10 a, v gen = - 10 v, r g = 1 : 10 20 ns rise time t r 918 turn -off delaytime t d(off) 50 90 fall time t f 13 26 tu r n - o n d e l ay t i m e t d(on) v dd = - 20 v, r l = 2 : i d # - 10 a, v gen = - 4.5 v, r g = 1 : 42 75 rise time t r 40 70 tur n -off delaytime t d(off) 40 70 fal l time t f 18 35 drain-so ur ce body diode characteristics continous source-drain diode current i s t c = 25 c - 2.6 a pulse diode forward c urrent i sm - 30 body diode voltage v sd i s = - 2 a , v gs = 0 v - 0.75 - 1.2 v body diode reverse recovery time t rr i f = - 2 a, di/dt = 100 a/s, t j = 25 c 41 80 ns body diode reverse recovery charge q rr 32 65 nc re v erse recovery fall time t a 15 ns reverse reco v ery rise time t b 26 z z z g l q w h n m s ' 7 0
3 typical char ac teristics (25 c, unless otherwise noted) output characteristics on-resistan ce vs. drain current gate charge 0 8 16 24 32 40 0.0 0 .5 1.0 1 .5 2.0 2.5 v gs =10v t hru4v v gs =3v v gs =2v v ds - drain-to-source voltage (v) i d - drain current (a) 0.015 0.019 0.023 0.027 0.031 0.035 0 8 16 24 32 40 v gs =4.5 v v gs =10v r ds(on) - on-resistance ( ) i d - drain current (a) 0 2 4 6 8 10 0 9 18 27 36 45 i d =10a v ds =20v v ds =3 0v v ds =10v q g - total gate charge (nc) v gs - gate-to-source voltage (v) transfe r characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 012345 t c = 125 c t c = 25 c t c = - 55 c v gs - gate-to-source voltage (v) i d - drain current (a) c rss 0 620 1240 1860 2480 3100 0 8 16 24 32 40 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 i d =8a v gs =4.5 v v gs =10v t j - junction temperature (c) (normalized) r ds(on) - on-resistance www.din-tek.jp dt m4 909
4 typical ch ara cteristics (25 c, unless otherwise noted) sour ce-d rain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) i s - source current (a) - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 i d =5ma i d = 250 a v gs(th) variance (v) t j - temperature (c) on-resistance vs. gate-to-source vol t age single pulse power, junction-to-ambient 0.00 0.03 0.06 0.09 0.12 0.15 012 345678910 t j =25 c t j = 125 c i d =8a r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) 0 10 20 30 40 50 01 1 10 0 . 00 . 0 1 0.1 time (s) power (w) safe operating area 0.01 100 1 100 0.01 0.1 10 s 10 ms 0.1 1 10 10 t a = 25 c single pulse 1ms dc bvdss limited 1s 100 ms limited by r ds(on) * v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified i d - drain current (a) www.din-tek.jp dt m4 909
5 typical char ac teristics (25 c, unless otherwise noted) * t he power dissipat ion p d is based on t j(max ) = 150 c , using junctio n-to-case thermal resi stance, and is more useful in settling the upper dissi p ation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. curr en t derating* 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) power, ju ncti on-to-foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperature (c) power (w) power d e rating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w) www.din-tek.jp dt m4 909
6 typical ch ara cteristics (25 c, unless otherwise noted) normalized th erm al transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective t ransient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 110 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface m ounted duty c ycle = 0.5 single pulse 0.02 0.05 normalized th erma l transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 duty c ycle = 0.5 square wave pulse duration (s) normalized effective t ransient thermal impedance 1 0.1 0.01 0.05 single pulse 0.02 www.din-tek.jp dt m4 909
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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